[20a-CE-1~12] 13.5 Semiconductor devices and related technologies

[20a-CE-9] Sensitivity Characteristics of GaAsSb/InAs Nanowire Backward Diodes at 2.4 GHz

〇Tsuyoshi Takahashi^1,2, Kenichi Kawaguchi^1,2, Masaru Sato^1,2, Naoya Okamoto^1,2, Michihiko Suhara³ (1.Fujitsu, 2.Fujitsu Labs., 3.Tokyo Metro. Univ.)

Keywords:Nanowire, Backward diode, Sensitivity

Ambient RF energy harvesting is an attractive method of supplying alternative power to drive sensors for the internet of things (IoT). In this work, for the first time, we report the microwave sensitivity of p-GaAsSb/n-InAs nanowire backward diodes. Sensitivity of 25 kV/W was obtained for the 96-NW-array diode at 2.4 GHz.