[20a-PA1-1~11] 7 Beam Technology and Nanofabrication (Poster)

[20a-PA1-10] Low-Energy Silicon Molecular Ion Beam Produced from Hexamethyldisilazane

〇Satoru Yoshimura¹, Satoshi Sugimoto¹, Takae Takeuchi², Kensuke Murai³, Masato Kiuchi^3,1 (1.Osaka Univ., 2.Nara Women's Univ., 3.AIST)

Keywords:Hexamethyldisilazane

Fragment ions produced from hexamethyldisilazane (HMDS) with a hot tungsten wire in a Freeman-type ion source were assayed using a low-energy mass-selected ion beam system. The possible candidates of chemical formulae for these ions are C⁺, N⁺, CH₃⁺, CH₄⁺, Si⁺, SiCH₅⁺, SiC₂H₆⁺, SiC₃H₉⁺, Si₂NCH₄⁺, Si₂NC₂H₇⁺, Si₂NC₃H₁₀⁺, Si₂NC₄H₁₂⁺, and Si₂NC₅H₁₆⁺. The ion production strongly depended on the tungsten temperature. Among the HMDS derived fragment ions, SiCH₅⁺ ions were mass-selected. The ion energy was 100 eV. Then, the SiCH₅⁺ ions were irradiated to a Si substrate. It was inferred from the analysis of resulting deposited film that silicon carbide films containing a small amount of nitrogen atoms were deposited following the irradiation.