[20a-PA1-1~11] 7 Beam Technology and Nanofabrication (Poster)

[20a-PA1-8] Generation of the Argon multi-charged ion in the Oshima-ECR ion source and future works

〇(B)Rentaro Kubo¹, Riku Yoshioka¹, Tubasa Nakamura¹, Toyohisa Asaji², Muneo Furuse¹ (1.NIT, Oshima, 2.NIT, Toyama)

Keywords:ECR ion source, semiconductor production

This study carries out the multi-charged ion generation (efficiency) using ECR ion source. In recent years an ion injection technique of aluminum to SiC that is the base in semiconductor production becomes important. As the results, we were able to detect an ion of Ar7+ (ionization energy is about 124eV) that the ionization energy was near to an ion of Al4+(ionization energy is about 120eV). The quantity of ion beam electric current was approximately 130nA. Therefore, generation of Al4+ that we targeted is possible.