The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20a-PA3-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

9:30 AM - 11:30 AM

[20a-PA3-1] Low temperature deformation and pattern transfer of Ge single crystal by direct electric heating

Taiki Sakamoto1, Kai Tokuhiro1, Masahiro Shimizu1, Yasuhiko Shimotsuma1, Kiyotaka Miura1, Satoru Hachinohe2 (1.Kyoto Univ., 2.Proud Inc)

Keywords:germanium, deformation, spark plasma sintering

Normally, the spark plasma sintering (SPS) method is a technique used for sintering powder. But we treat the CZ - Si single crystal by the SPS method. By doing so, We succeeded in deforming Si in a short time while maintaining the transmittance. In this study, it was confirmed that the same group Ge can be deformed by using the same method, and the physical properties were measured using FT-IR and EBSD. Furthermore, attempts have been made to transfer a mold pattern to a Ge single crystal by SPS method using Si single crystal patterned on the surface using FIB as a mold.