[20a-PA5-1~14] 13.3 Insulator technology

[20a-PA5-2] Reduction of Residual OH Content in a Low-temperature Si Oxide Film by Low-temperature Annealing (150^oC)

〇Susumu Horita¹ (1.JAIST)

Keywords:Si oxide film, low temperature, annealing

Generally, using organic Si deposition source, Si oxide films deposited at lower temperature contain a lager amount of Si-OH bonds due to chemical reaction during the deposition. Since the OH bonds degrade film dielectric property, post-annealing is inevitably needed. In order to reduce them enough for device quality, high temperature is required, which is sometimes more than the deposition temperature. This is a serious problem for low-temperature device process. For solving it, in this meeting, we propose a new annealing method using NH₃ gas, which can markedly reduce OH content at even low 150^oC for a short time 30 min.