Oral presentation

[21a-145-1~9] 13.3 Insulator technology

Fri. Sep 21, 2018 9:00 AM - 11:30 AM 145 (Reception Hall)

Osamu Nakatsuka(Nagoya Univ.), Ishizaki Hiroki(Saitama Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-145-1] Theoretical study on Si missing in Si pillar oxidation

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

9:15 AM - 9:30 AM

[21a-145-2] Theoretical study on the effect of O atoms in the substrate on the oxidation of Si pillar

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Natural Science and Technology, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

9:30 AM - 9:45 AM

[21a-145-3] Properties of a CVD-SiO₂ film at room temperature by active species from high purity ozone gas

〇Naoto Kameda¹, Toshinori Miura¹, Yoshiki Morikawa¹, Mitsuru Kekura¹, Ken Nakamura², Hidehiko Nonaka² (1.Meidensha corp., 2.AIST)

9:45 AM - 10:00 AM

[21a-145-4] SiO₂ film deposition by low temperature ALD using SiBr₄

〇Akihito Imase¹, Shigeki Matsumoto¹, Yonghua Xu¹, Masahito Shibata¹ (1.Tri Chemical Laboratories Inc.)

10:00 AM - 10:15 AM

[21a-145-5] Dielectric Function of Oxide Film from Analysis of Energy Loss Signals for Photoelectrons

〇Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:30 AM - 10:45 AM

[21a-145-6] [Young Scientist Presentation Award Speech] Fabrication technique of ferroelectric Hf_xZr₁_-xO₂ thin films using nano-ZrO₂ nucleation layer

〇Takashi Onaya^1,2,3, Toshihide Nabatame², Naomi Sawamoto¹, Ohi Akihiko², Naoki Ikeda², Takahiro Nagata², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC)

10:45 AM - 11:00 AM

[21a-145-7] Impact of ramp-up/down rate in RTA on HfO₂ ferroelectricity

〇Yuki Mori¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

11:00 AM - 11:15 AM

[21a-145-8] Chemical state analysis of ferroelectric HfSiO MIM structure by HAXPES evaluation

〇Koji Usuda¹, Yuuichi Kamimuta¹, Shoichi Kabuyanagi¹, Masahiko Yoshiki², Mitsuhiro Tomita¹, Saitoh Masumi¹ (1.Toshiba Memory, 2.Toshiba R&D Center)

11:15 AM - 11:30 AM

[21a-145-9] Investigation of forming-free resistive switching properties in Al/HfO₂/Si structure

〇Kohei Kobayashi¹, Haruhiko Yoshida¹, Koji Arafune¹, Shin-ichi Satoh¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

Oral presentation

[21p-145-1~14] 13.3 Insulator technology

Fri. Sep 21, 2018 1:15 PM - 5:00 PM 145 (Reception Hall)

Keisuke Yamamoto(Kyushu Univ.), Yasushi Hotta(Univ. of Hyogo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

▲ [21p-145-1] [Young Scientist Presentation Award Speech] Thermal oxidation kinetics of Ge under high O₂ pressure

〇Xu Wang¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.Tokyo Univ.)

1:30 PM - 1:45 PM

[21p-145-2] Characteristic change of GeO ₂ / Ge interface by Hf-Post Metallization Annealing

〇Haruka Fujiwara¹, Yoshitaka Iwazaki¹, Tomo Ueno¹, Yamada Hiroshi¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri. & Tech.)

1:45 PM - 2:00 PM

[21p-145-3] Fabrication and Evalution of GeO₂/Ge structure by CVD method

〇Yasuyuki Katsuno¹, Amu Sato¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

2:00 PM - 2:15 PM

[21p-145-4] Fabrication of Y-Oxide Gate Stack on Ge by using Electron Beam Evaporation

〇Kentaro Akiyama¹, Kento Iseri¹, Wei-Chen Wen¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

2:15 PM - 2:30 PM

[21p-145-5] Fabrication and evaluation of HfO₂/Ge structure using Kr/O₂ plasma oxidation method

〇(M1)Takeshi Tokorozuki¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

2:30 PM - 2:45 PM

[21p-145-6] Manufacture and evaluation of High-k/GeO₂/Ge

〇Ryuichirou Watanabe¹, Kenichiro Toyoda¹, Syoutaro Wachi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

2:45 PM - 3:00 PM

▲ [21p-145-7] How Ge atoms behave in thermal oxidation of SiGe?

〇(P)Xiuyan Li¹, Yusuke Noma¹, Woojin Song¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

[21p-145-8] Verification of oxidation selectivity by chemical oxdation for metal Hf/Si structure

〇Hiroki Oba¹, Yoshitaka Iwasaki¹, Tomo Ueno¹ (1.Tkoyo Univ. of Agri & Tech.)

3:30 PM - 3:45 PM

[21p-145-9] Impact of Short-Range-Order in Amorphous Structure on the Dipole Layer Formation at Oxide Hetero-interfaces

〇Shota Kanemaru¹, Okuto Takahashi¹, Marc Perea¹, Motohiro Tomita¹, Takanobu Watanabe¹ (1.Waseda Univ.)

3:45 PM - 4:00 PM

△ [21p-145-10] Study on applicability to energy harvesting of the interface dipole layer strength change under temperature fluctuating environment

〇Takashi Hamaguchi¹, Koji Kita¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

[21p-145-11] Influence of interface dipole layers in tricolor superstructure

〇Ikuya Saiki¹, Haruhiko Yoshida¹, Koji Arafune¹, Shin-ichi Satoh¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

4:15 PM - 4:30 PM

[21p-145-12] Capacitance-voltage characteristics of HfO₂ MIM capacitors with Si incorporation

〇(B)Haruki Iwatsuka¹, Takuya Hosii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1.Tokyo Inst.)

4:30 PM - 4:45 PM

[21p-145-13] Charge and discharge characteristics of MIM capacitors with CeO_x layer

〇Kohei Sasa¹, Kazuya Hisatsune¹, Takuya Hoshii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1.Tokyo Inst.)

4:45 PM - 5:00 PM

▲ [21p-145-14] Accurate measurement of the internal potential in two capacitors connected in series for studying Negative Capacitance effects

〇(P)Xiuyan Li¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Poster presentation

[20a-PA5-1~14] 13.3 Insulator technology

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-PA5-1] Penetration of H₂O molecule into SiO₂ films with a variety of crystal structure

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric Corporation)

9:30 AM - 11:30 AM

[20a-PA5-2] Reduction of Residual OH Content in a Low-temperature Si Oxide Film by Low-temperature Annealing (150^oC)

〇Susumu Horita¹ (1.JAIST)

9:30 AM - 11:30 AM

[20a-PA5-3] Study of pressure effect on dynamical properties for SiO₂ with oxygen vacancy

〇Yuji Yajima¹, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4, Hiroyuki Kageshima^1,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

9:30 AM - 11:30 AM

[20a-PA5-4] Low Temperature SiO₂ Atomospheric Pressure Chemical Vaper Deposition using SiH₄/O₃ and its application to oxide-semiconductor TFTs

〇Hiroyuki Suzuki¹, Tomo Ueno², Hiroyuki Uchiyama³, Ikuo Kurachi⁴, Kentaro Yoshioka¹ (1.AMAYA Co.,Ltd, 2.Tokyo University of Agriculture and Technology, 3.Hitachi,Ltd, 4.D&S Inc.)

9:30 AM - 11:30 AM

[20a-PA5-5] Characterization of the multiple thin oxide films and interfaces on Si by PEALD

〇Yusaku Tanahashi¹, Shingo Ogawa¹, Keiko Inoue¹, Tomomi Sugimoto¹, Yumiko Shimizu¹, Shino Kosaka¹, Hirofumi Seki¹ (1.Toray Research Center, Inc.)

9:30 AM - 11:30 AM

[20a-PA5-6] Theoretical study on the effect of incorporation of Hf atoms in AlON gate dielectrics

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2, Takuji Hosoi³, Heiji Watanabe³, Atsushi Oshiyama², Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Osaka Univ.)

9:30 AM - 11:30 AM

[20a-PA5-7] Paramagnetic point defects in silicon nitride films annealed at 1050℃(２)

〇(M2)Shinji Yamaguchi¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

[20a-PA5-8] Electron retention characteristics of metal-oxide-nitride-oxide-silicon-type nonvolatile memory devices

〇(M2)Takuro Kishida¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

[20a-PA5-9] Observation of polarization reversal of ferroelectric HfO₂ by impedance analysis

Shuhei Yasuda¹, Shigehisa Shibayama¹, 〇Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.The Univ. of Tokyo, 2.AIST)

9:30 AM - 11:30 AM

[20a-PA5-10] Relationship between interface state generation and substrate hole current in InGaAs n- MOSFETs

〇(D)SANghee YOON¹, Daehwan Ahn¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

9:30 AM - 11:30 AM

[20a-PA5-11] Fabrication and Characteristics Improvement of Silicon Nitride Thin Film on Silicon Substrate by Microwave Plasma

〇Syunpei Ogawa¹, Tatsuya Kuroda¹, Yasuyuki Kato¹, Kazuhiro Niwa¹, Hiroki Ishizaki¹ (1.Saitama Institute of Technology)

9:30 AM - 11:30 AM

[20a-PA5-12] Surface state of Ge substrate by S-Passivation process

〇Tatsuya Kuroda¹, Syunpei Ogawa¹, Yasuyuki Katou¹, Kazuhiro Niwa¹, Hiroki Ishizaki¹ (1.Saitama Institute of Technology)

9:30 AM - 11:30 AM

[20a-PA5-13] A study of PDA effect in High-k/GeO₂/Ge structure

〇Shotaro Wachi¹, Ryuichiro Watanabe¹, Yoshinori Kitahara¹, Yoshitaka Iwasaki¹, Koji Yamada¹, Tomo Ueno¹, Mitaro Namiki¹ (1.Tokyo Univ. of Agri&Tech)

9:30 AM - 11:30 AM

▲ [20a-PA5-14] Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application

〇(D)Weichen Wen¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

Sessions

13 Semiconductors » 13.3 Insulator technology

[21a-145-1~9] 13.3 Insulator technology

[21p-145-1~14] 13.3 Insulator technology

▲ [21p-145-1] [Young Scientist Presentation Award Speech] Thermal oxidation kinetics of Ge under high O2 pressure

▲ [21p-145-7] How Ge atoms behave in thermal oxidation of SiGe?

△ [21p-145-10] Study on applicability to energy harvesting of the interface dipole layer strength change under temperature fluctuating environment

▲ [21p-145-14] Accurate measurement of the internal potential in two capacitors connected in series for studying Negative Capacitance effects

[20a-PA5-1~14] 13.3 Insulator technology

▲ [20a-PA5-14] Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application

Authentication

▲ [21p-145-1] [Young Scientist Presentation Award Speech] Thermal oxidation kinetics of Ge under high O₂ pressure