Paramagnetic point defects in silicon nitride films annealed at 1050℃(２)

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

9:30 AM - 11:30 AM

〇(M2)Shinji Yamaguchi¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Keywords:silicon nitride films