The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[21a-145-1~9] 13.3 Insulator technology

Fri. Sep 21, 2018 9:00 AM - 11:30 AM 145 (Reception Hall)

Osamu Nakatsuka(Nagoya Univ.), Ishizaki Hiroki(Saitama Inst. of Tech.)

9:00 AM - 9:15 AM

[21a-145-1] Theoretical study on Si missing in Si pillar oxidation

Hiroyuki Kageshima1,4, Kenji Shiraishi2,4, Tetsuo Endoh3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

Keywords:Si oxidation process, theoretical study, Si pillar

Vertical BC-MOSFET is a promising candidate of next generation device. However, the 'Si missing' disturbs the device shape by the thermal oxidation process for fabricating the gate oxide. We theoretically discuss the physical mechanism of this 'Si missing'. We have concluded that the oxide viscous flow mechanism is the most promising at present.