[21a-145-1~9] 13.3 Insulator technology

[21a-145-2] Theoretical study on the effect of O atoms in the substrate on the oxidation of Si pillar

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Natural Science and Technology, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

Keywords:Si, First-principles calculation

Si pillar is a fundamental element of vertical body channel MOSFETs; however, they are difficult to uniformly oxidize Si pillars. In a recent study, the uniform oxidation of Si pillars was achieved by using a Si wafer with a high concentration of oxygen atoms. We used first-principles calculations to investigate the effect of these O atoms on the oxidation of Si pillars. We found that the orientation dependence of the Si emission rate was reduced when there was a high concentration of O atoms in the Si wafer, enabling the Si pillars to be uniformly oxidized.