[20a-PA5-1~14] 13.3 Insulator technology

[20a-PA5-4] Low Temperature SiO₂ Atomospheric Pressure Chemical Vaper Deposition using SiH₄/O₃ and its application to oxide-semiconductor TFTs

〇Hiroyuki Suzuki¹, Tomo Ueno², Hiroyuki Uchiyama³, Ikuo Kurachi⁴, Kentaro Yoshioka¹ (1.AMAYA Co.,Ltd, 2.Tokyo University of Agriculture and Technology, 3.Hitachi,Ltd, 4.D&S Inc.)

Keywords:silicon oxide film, chemical vapor deposition, passivation

In the manufacture of a flat panel display, a technique for forming a silicon oxide film at a low temperature on a large area glass substrate is essential. Therefore, we developed an atmospheric pressure CVD system of SiH ₄ / O ₃ gas capable of forming silicon oxide film even at low temperature, and optimized film forming conditions from the viewpoint of film characteristics. Furthermore, by applying the silicon oxide film formed at 300 ° C. or less using this system to the passivation of the oxide-semiconductor TFTs and confirmed that good TFT characteristics can be obtained.