Takuya Nagura

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 11:30 AM 145 (Reception Hall)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[21a-145-1~9] 13.3 Insulator technology

9:15 AM - 9:30 AM

[21a-145-2] Theoretical study on the effect of O atoms in the substrate on the oxidation of Si pillar

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Natural Science and Technology, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

Poster presentation
| 13 Semiconductors
| 13.3 Insulator technology

[20a-PA5-1~14] 13.3 Insulator technology

9:30 AM - 11:30 AM

[20a-PA5-6] Theoretical study on the effect of incorporation of Hf atoms in AlON gate dielectrics

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2, Takuji Hosoi³, Heiji Watanabe³, Atsushi Oshiyama², Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Osaka Univ.)

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