[21a-145-1~9] 13.3 Insulator technology

Fri. Sep 21, 2018 9:00 AM - 11:30 AM 145 (Reception Hall)

Osamu Nakatsuka(Nagoya Univ.), Ishizaki Hiroki(Saitama Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-145-1] Theoretical study on Si missing in Si pillar oxidation

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

9:15 AM - 9:30 AM

[21a-145-2] Theoretical study on the effect of O atoms in the substrate on the oxidation of Si pillar

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Natural Science and Technology, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

9:30 AM - 9:45 AM

[21a-145-3] Properties of a CVD-SiO₂ film at room temperature by active species from high purity ozone gas

〇Naoto Kameda¹, Toshinori Miura¹, Yoshiki Morikawa¹, Mitsuru Kekura¹, Ken Nakamura², Hidehiko Nonaka² (1.Meidensha corp., 2.AIST)

9:45 AM - 10:00 AM

[21a-145-4] SiO₂ film deposition by low temperature ALD using SiBr₄

〇Akihito Imase¹, Shigeki Matsumoto¹, Yonghua Xu¹, Masahito Shibata¹ (1.Tri Chemical Laboratories Inc.)

10:00 AM - 10:15 AM

[21a-145-5] Dielectric Function of Oxide Film from Analysis of Energy Loss Signals for Photoelectrons

〇Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:30 AM - 10:45 AM

[21a-145-6] [Young Scientist Presentation Award Speech] Fabrication technique of ferroelectric Hf_xZr₁_-xO₂ thin films using nano-ZrO₂ nucleation layer

〇Takashi Onaya^1,2,3, Toshihide Nabatame², Naomi Sawamoto¹, Ohi Akihiko², Naoki Ikeda², Takahiro Nagata², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC)

10:45 AM - 11:00 AM

[21a-145-7] Impact of ramp-up/down rate in RTA on HfO₂ ferroelectricity

〇Yuki Mori¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

11:00 AM - 11:15 AM

[21a-145-8] Chemical state analysis of ferroelectric HfSiO MIM structure by HAXPES evaluation

〇Koji Usuda¹, Yuuichi Kamimuta¹, Shoichi Kabuyanagi¹, Masahiko Yoshiki², Mitsuhiro Tomita¹, Saitoh Masumi¹ (1.Toshiba Memory, 2.Toshiba R&D Center)

11:15 AM - 11:30 AM

[21a-145-9] Investigation of forming-free resistive switching properties in Al/HfO₂/Si structure

〇Kohei Kobayashi¹, Haruhiko Yoshida¹, Koji Arafune¹, Shin-ichi Satoh¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

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