[20a-PA5-1~14] 13.3 Insulator technology

[20a-PA5-6] Theoretical study on the effect of incorporation of Hf atoms in AlON gate dielectrics

〇(M2)Takuya Nagura¹, Kenta Chokawa¹, Masaaki Araidai^1,2, Takuji Hosoi³, Heiji Watanabe³, Atsushi Oshiyama², Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Osaka Univ.)

Keywords:AlON, First-principles calculation

We performed first-principle calculations to investigate the effect of incorporation of Hf atoms into AlON (aluminum oxynitride) gate dielectrics. Our calculations show that the defect levels are generated by N 2p orbitals in some AlON models. The defect levels are the origin of the hole leakage current in the gate dielectrics reported by Hosoi et al because they exist near the top of the valence band. Moreover, we revealed that the incorporation of Hf atoms into AlON eliminates the defect levels, reducing the hole leakage current.