[20a-PB3-1~14] 3.9 Terahertz technologies

▲ [20a-PB3-2] Enhanced terahertz emission of gallium arsenide thin film with integrated porous silicon distributed Bragg reflector

〇(M2)Ameera Al-rashid Jose¹, Anthony Montecillo¹, Joybelle Lopez¹, Alexander De Los Reyes², Miguel Bacaoco², Maria Angela Faustino¹, Arven Cafe¹, John Daniel Vasquez¹, Karl Cedric Gonzales², Gerald Angelo Catindig², Armando Somintac², Arnel Salvador², Elmer Estacio^1,2 (1.Materials Science and Engineering Program, University of the Philippines Diliman, 2.National Institute of Physics, University of the Philippines Diliman)

Keywords:Bragg Reflectors, Optical properties of photonic structures

The THz emission of a 550nm-thick MBE-grown undoped/n-type gallium arsenide (GaAs) thin film with integrated porous silicon distributed Bragg reflector (PSi DBR) is presented. The active GaAs film has a total thickness less than the penetration depth of the 800nm excitation source, while the PSi DBR substrate was designed as a reflecting substrate for the transmitted photons at the film-substrate interface. A 67% increase in the peak-to-peak THz signal was observed when the emitter was compared to a similar GaAs film on bulk silicon (Si) substrate. The achieved improvement was accounted to the increased light absorption in the active layer.