[20a-PB3-1~14] 3.9 テラヘルツ全般

▲ [20a-PB3-2] Enhanced terahertz emission of gallium arsenide thin film with integrated porous silicon distributed Bragg reflector

〇(M2)Ameera Al-rashid Jose¹、Anthony Montecillo¹、Joybelle Lopez¹、Alexander De Los Reyes²、Miguel Bacaoco²、Maria Angela Faustino¹、Arven Cafe¹、John Daniel Vasquez¹、Karl Cedric Gonzales²、Gerald Angelo Catindig²、Armando Somintac²、Arnel Salvador²、Elmer Estacio^1,2 (1.Materials Science and Engineering Program, University of the Philippines Diliman、2.National Institute of Physics, University of the Philippines Diliman)

キーワード：Bragg Reflectors, Optical properties of photonic structures

The THz emission of a 550nm-thick MBE-grown undoped/n-type gallium arsenide (GaAs) thin film with integrated porous silicon distributed Bragg reflector (PSi DBR) is presented. The active GaAs film has a total thickness less than the penetration depth of the 800nm excitation source, while the PSi DBR substrate was designed as a reflecting substrate for the transmitted photons at the film-substrate interface. A 67% increase in the peak-to-peak THz signal was observed when the emitter was compared to a similar GaAs film on bulk silicon (Si) substrate. The achieved improvement was accounted to the increased light absorption in the active layer.