[20a-PB4-1~8] 3.13 Semiconductor optical devices

[20a-PB4-6] Improvement of carrier transport property in the c-Se photoconversion layer using p-type NiO cap layer

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

Keywords:crystalline selenium, nikkel oxide, image sensor

Recently, to meet the demands of recent high definition imaging systems, the number of pixels of the image sensor has increased. Owing to the reduced pixel size of the image sensor, the amount of light received per pixel has significantly decreased. To solve the problems, we have been developed the high sensitivity CMOS image sensors overlaid with the crystalline selenium (c-Se)-based photoconversion layer. In this study, the p-type NiO film inserted as a capping layer between c-Se and ITO effectively eliminates the Schottky barrier formed at the c-Se/ITO interface and smoothly transfers the hole carrier, resulting in a reduction in the afterimage of the captured image.