[20a-PB4-1~8] 3.13 Semiconductor optical devices

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-PB4-1] High-temperature (200 ℃) Operation of Mid-infrared Distributed Feedback (DFB) Quantum Cascade Laser

〇Hiroyuki Yoshinaga¹, Takashi Kato¹, Hiroki Mori¹, Yukihiro Tsuji¹, Makoto Murata¹, Masaki Migita¹, Jun-ichi Hashimoto¹, Mitsuru Ekawa¹, Yasuhiro Iguchi¹, Tsukuru Katsuyama¹ (1.Sumitomo Electric Industries, Ltd.)

9:30 AM - 11:30 AM

[20a-PB4-2] Room temperature lasing of 1.5mm wavelength GaInAsP high-mesa laser diode on wafer bonded InP/Si substrate

〇Kazuki Uchida¹, Xu Han¹, Gandhi Kallarasan Periyanayagam¹, Hirokazu Sugiyama¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Hiromu Yada¹, Masaki Matsuura¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[20a-PB4-3] Photoluminescence characteristics of InAs quantum dots structure using double-cap procedure

〇(M1)Hiromu Yada¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Xu Han¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Masaki Matsuura¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

[20a-PB4-4] Characteristic improvement by annealing of 1550 nm-band quantum dots ridge-structure laser formed by dry etching

〇(M2)Yota Akashi¹, Shohei Isawa¹, Atsushi Matsumoto², Kouichi Akahane², Yuichi Matsushima³, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT, 3.GCS Waseda Univ.)

9:30 AM - 11:30 AM

[20a-PB4-5] Loss Reduction of Optical Memory Waveguide Using Photochromic Materials in Core Layer.

〇Keisuke Tanimoto¹, Satoru Kawamura¹, Yoshiteru Amemiya¹, Shin Yokoyama¹ (1.Res. Inst. for Nanodevice and Bio Syst. Hiroshima Univ.)

9:30 AM - 11:30 AM

[20a-PB4-6] Improvement of carrier transport property in the c-Se photoconversion layer using p-type NiO cap layer

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Nanba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

9:30 AM - 11:30 AM

[20a-PB4-7] OEIC Integrating Waveguide, Photodiode, CMOS Operational Amplifier

〇Taichi Uruma¹, Tetsuo Tabei¹, Yoshiteru Amemiya¹, Tadashi Sato¹, Shinji Yamada¹, Kazushi Okada¹, Shin Yokoyama¹ (1.Res. Int. for Nanodevice and Bio Systems, Hiroshima Univ.)

9:30 AM - 11:30 AM

[20a-PB4-8] Self-Modulation of a Laser Beam at the Band Edge of Silicon

Hiroki Miyabe¹, Yosuke Kawase¹, 〇Mitsunori Saito¹ (1.Ryukoku Univ.)

Session information

[20a-PB4-1~8] 3.13 Semiconductor optical devices

[20a-PB4-1] High-temperature (200 ℃) Operation of Mid-infrared Distributed Feedback (DFB) Quantum Cascade Laser

[20a-PB4-2] Room temperature lasing of 1.5mm wavelength GaInAsP high-mesa laser diode on wafer bonded InP/Si substrate

[20a-PB4-3] Photoluminescence characteristics of InAs quantum dots structure using double-cap procedure

[20a-PB4-4] Characteristic improvement by annealing of 1550 nm-band quantum dots ridge-structure laser formed by dry etching

[20a-PB4-5] Loss Reduction of Optical Memory Waveguide Using Photochromic Materials in Core Layer.

[20a-PB4-6] Improvement of carrier transport property in the c-Se photoconversion layer using p-type NiO cap layer

[20a-PB4-7] OEIC Integrating Waveguide, Photodiode, CMOS Operational Amplifier

[20a-PB4-8] Self-Modulation of a Laser Beam at the Band Edge of Silicon

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