[20a-PB8-1~9] 6.1 Ferroelectric thin films

[20a-PB8-5] Change of bent band structure on ferroelectric BaTiO₃ by electric polarization reversal

〇Norihiro Oshime¹, Jun Kano¹, Eiji Ikenaga², Shintaro Yasui³, Satoshi Hinokuma⁴, Naoshi Ikeda¹, Yosuke Hamasaki⁵, Sou Yasuhara³, Takayoshi Yokoya⁶, Mitsuru Itoh³, Tatsuo Fujii¹, Akira Yasui⁷, Hitoshi Osawa⁷ (1.Okayama Univ., 2.IMaSS, Nagoya Univ., 3.MSL, Tokyo Tech., 4.Kumamoto Univ., 5.National Defense Academy, 6.RIIS, Okayama Univ., 7.JASRI)

Keywords:ferroelectricity, semiconductor, band structure