Oral presentation

[19a-133-1~12] 6.1 Ferroelectric thin films

Wed. Sep 19, 2018 9:00 AM - 12:15 PM 133 (133+134)

Shintaro Yasui(Tokyo Tech), Takashi Nakajima(Tokyo Univ. of Sci.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[19a-133-1] Characterization of effective transverse piezoelectric coefficients e_31,f of P(VDF-TrFE) films

〇Iduru Kanagawa¹, Yuji Matsushita¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

9:15 AM - 9:30 AM

[19a-133-2] Investigation of the Electrocaloric Effect in P(VDF-TrFE) Thin Films using Thin-film Thermocouple

〇(DC)Yuji Matsushita¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

9:30 AM - 9:45 AM

[19a-133-3] Electrocaloric effects in antiferroelectric PbZrO₃ thin films

〇Hiroshi Maiwa¹ (1.Shonan Inst. Tech.)

9:45 AM - 10:00 AM

[19a-133-4] Preparation of (Bi, Na) TiO₃ - BaTiO₃ -based thick film by PLD method and their characterization

〇(M2)Miyu Hasegawa¹, Takao Shimizu¹, Yusuke Sato², Wakiko Yamaoka², Mirai Ishida², Hiroshi Funakubo¹ (1.Tokyo Tech, 2.TDK corp)

10:00 AM - 10:15 AM

△ [19a-133-5] Influence of Fe₂O₃ Seed Layer on Thin Film Growth of BiFeO₃by MOCVD

〇(M2)Nao Yoshimura¹, Hironori Fujisawa¹, Seiji Nakashima¹, Masaru Shimizu¹ (1.Univ. of Hyogo)

10:15 AM - 10:30 AM

△ [19a-133-6] Polarization switching behavior of compositionally-grade Bi_1-xSm_xFeO₃ thin films

〇Yuto Anada¹, Shingo Maruyama¹, Shintaro Yasui², Hiroshi Naganuma¹, Mitsuru Itou², Yuji Matsumoto¹ (1.Tohoku Univ., 2.Tokyo tech. MSL)

10:45 AM - 11:00 AM

[19a-133-7] Elucidation of crystal symmetry and strain of BiFeO₃ epitaxial films on various substrates by structural calculation and electron diffraction

〇Hiroshi Naganuma^1,7, Bae In-Tae¹, Tomohiro Ichinose², Andras Kovacs³, Shintaro Yasui⁴, Hong Zhao⁵, Jorge Iniguez⁵, Myung-Geun Han⁶ (1.Univ. NY, 2.Tohoku Univ., 3.ER-C Peter Grunberg Inst., 4.TIT, 5.LIST, 6.Brookhaven Nat. Lab., 7.CNRS/Thales)

11:00 AM - 11:15 AM

△ [19a-133-8] Ferroelectric / ferromagnetic domain structure change in B-site substituted BiFeO₃ thin films

〇Marin Katsumata¹, Haruki Shimizu¹, Keisuke Shimizu², Kei Shigematsu¹, Masaki Azuma¹ (1.MSL Tokyo Tech, 2.IIR Tokyo Tech)

11:15 AM - 11:30 AM

△ [19a-133-9] A Bulk Photovoltaic Effect and Induced Optical Strains of Mn-doped BiFeO₃ Thin Films

〇(M1)Ryu Hayashimoto¹, Seiji Nakashima¹, Hironori Fujisawa¹, Masaru Shimizu¹ (1.Univ. of Hyogo)

11:30 AM - 11:45 AM

[19a-133-10] The effect of crystal distortion and domain structure on piezoelectric properties of BiFeO₃ thin films ２

〇Naoki Okamoto¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

11:45 AM - 12:00 PM

△ [19a-133-11] Enhancement of Output Power for Piezoelectric MEMS Vibration Energy Harvester using BiFeO₃ Films

〇(D)Masaaki Aramaki¹, Takeshi Yoshimura¹, Shuichi Murakami², Kazuo Satoh², Norifumi Fujimura¹ (1.Osaka Pref. Univ., 2.ORIST)

12:00 PM - 12:15 PM

[19a-133-12] 【Highlighted Presentation】Characterization of Frequency Dispersion of Non-180° Domain Switching in Rhombohedral PZT by Time-Resolved Synchrotron Radiation X-ray diffraction

〇Takao Shimizu¹, Yoshitaka Ehara¹, Takanori Mimura¹, Shintaro Yasui¹, Tomoaki Yamada², Yasuhiko Imai³, Yoshio Katsuya⁴, Osami Sakata⁴, Hiroshi Funakubo¹ (1.Tokyo Tech, 2.Nagoya Univ., 3.JASRI, 4.NIMS)

Oral presentation

[19p-133-1~19] 6.1 Ferroelectric thin films

Wed. Sep 19, 2018 1:45 PM - 7:00 PM 133 (133+134)

Tomoaki Yamada(Nagoya Univ.), Takeshi Yoshimura(Osaka Pref. Univ.), Takashi Eshita(Wakayama Univ.), Hiroshi Naganuma(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[19p-133-1] [Young Scientist Presentation Award Speech] Polarization control of ScAlN, ZnO and PZT-based thin films for polarity inverted resonators

〇Takahiro Shimidzu^1,2, Takahiko Yanagitani^1,2,3 (1.Waseda Univ., 2.ZAIKEN, 3.JST PRESTO)

2:00 PM - 2:15 PM

[19p-133-2] Electrical properties of Ba(Zr,Ti)O₃ nanocube assemblies

〇Kenichi Mimura¹, Kazumi Kato¹ (1.AIST)

2:15 PM - 2:30 PM

[19p-133-3] Low temperature synthesis of Ta-substituted (K,Na)NbO₃ films by hydrothermal method

〇Yuta Muto¹, Takahisa Shiraishi¹, Takanori Kiguchi¹, Toyohiko Konno¹, Akinori Tateyama², Yosiharu Ito², Munoru Kurosawa², Hiroshi Hunakubo², Hiroshi Uchida³, Mutsuo Ishikawa⁴ (1.Tohoku Univ., 2.Tokyo Tech., 3.Sophia Univ., 4.Toin Univ.)

2:30 PM - 2:45 PM

[19p-133-4] Evaluation of crystal structure and electrical properties for hydrothermally-synthesized (K,Na,Li)NbO₃ films

〇Takahisa Shiraishi¹, Yuta Muto¹, Akinori Tateyama², Yoshiharu Ito², Takanori Kiguchi¹, Hiroshi Uchia³, Hiroshi Funakubo², Toyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech., 3.Sophia Univ.)

2:45 PM - 3:00 PM

△ [19p-133-5] Characterization of piezoelectric property for orientation-controlled (K,Na)NbO₃ films prepared by hydrothermal method.

〇(M2)Akinori Tateyama¹, Yoshiharu Ito¹, Yoshiko Nakamura¹, Takao Simizu¹, Yuichiro orino¹, Minoru Kurosawa¹, Hiroshi Uchida², Takahisa Shiraishi³, Takanori kKguchi³, Toyohiko Konno³, Mutsuo Ishikawa^1,4, Nobuhiro Kumada⁵, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Sophia Univ., 3.Tohoku Univ., 4.Toin Univ. Yokohama, 5.Yamanashi Univ.)

3:00 PM - 3:15 PM

△ [19p-133-6] In-situ observation of crystallographic deformation of (K,Na)NbO₃ lead-free thin films under voltage application

〇Geng Tan¹, Shintaro Nishioka¹, Tomoyuki Koganezawa², Toshihito Umegaki¹, Isaku Kanno¹ (1.Kobe Univ., 2.JASRI)

3:15 PM - 3:30 PM

△ [19p-133-7] Domain Switching by Applied Electric Field in (001) and (111)-epitaxial (K_0.5Na_0.5)NbO₃ Films

〇Mitsuki Kawano¹, Tomoaki Yamada^1,2, Osami Sakata^3,4, Yasuhiko Imai⁵, Masato Yoshino¹, Takanori Nagasaki¹ (1.Nagoya Univ., 2.JST-PRESTO, 3.NIMS, 4.Tokyo Tech., 5.JASRI)

3:45 PM - 4:00 PM

▼ [19p-133-8] Ferroelectric and Magnetic Properties of Al_xFe_2-xO₃ thin films

〇(P)BadariNarayana Aroor Rao¹, Shintaro Yasui¹, Tsukasa Katayama², Tomoyasu Taniyama^1,3, Mitsuru Itoh¹ (1.Tokyo Inst. of Tech., 2.Univ. of Tokyo, 3.Nagoya Univ.)

4:00 PM - 4:15 PM

[19p-133-9] Epitaxial film synthesis of Fe₂Mo₃O₈ using pulsed laser deposition

〇Shishin Mo¹, Tsukasa Katayama¹, Akira Chikamatsu¹, Shintaro Yasui², Mitsuru Itoh², Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Tokyo Tech.)

4:15 PM - 4:30 PM

[19p-133-10] Improvement of polarization characteristics by optimizing heat treatment condition and IrO_x oxidation state, and crystallization mechanism analysis in IrO_x / PLZT / Pt

〇KENJI NOMURA¹, Wensheng Wang², Hideshi Yamaguchi¹, Ko Nakamura², Takashi Eshita^2,3, Soichiro Ozawa², Kazuaki Takai², Satoru Mihara², Yukinobu Hikosaka², Makoto Hamada², Manabu Kojima², Yuji Kataoka¹ (1.Fujitsu Lab., 2.Fujitsu Semiconductor Ltd., 3.Wakayama Univ.)

4:30 PM - 4:45 PM

[19p-133-11] Structural Damages of Lead-free Ferroelectric Thick-Films by Proton Beam Irradiation

〇Masaki Yamaguchi^1,2, Yoichiro Masuda³, Jun Hirade¹ (1.Shibaura Inst. of Tech., 2.RCGI, Shibaura Inst. of Tech., 3.Hachinohe Inst. of Tech.)

4:45 PM - 5:00 PM

[19p-133-12] Ab initio study of lead vacancy on grain boundary of PbTiO₃

〇Yuuichi Motohashi^1,2, Takahiro Yamamoto² (1.Ricoh Co. Ltd., 2.Tokyo Univ. of Science)

5:00 PM - 5:15 PM

△ [19p-133-13] Influence of strain on electro-optic effect in c-domain (Ba, Sr)TiO₃ thin films (2)

〇Shinya Kondo¹, Tomoaki Yamada¹, Masahito Yoshino¹, Takanori Nagasaki¹ (1.Nagoya Univ.)

5:30 PM - 5:45 PM

[19p-133-14] Control of Leakage Current through BaTiO₃ Film by Cumulative Cycle of Applied Voltage Scanning for Emerging Application

Ryoko Kobayashi¹, So Maejima¹, Kaoru Yamashita¹, 〇Minoru Noda¹ (1.Kyoto Inst. Tech.)

5:45 PM - 6:00 PM

△ [19p-133-15] Study on electrical property control of graphene by pyroelectricity of LiNbO₃

〇(M1)Yudai Yasuhara^1,2, Toyohiro Chikyow², Atsusi Ogura¹, Takahiro Nagata² (1.Meiji Univ, 2.NIMS)

6:00 PM - 6:15 PM

△ [19p-133-16] Verification of shift current independent on carrier mobility by optimizing electrodes

〇(M1)Hiroki Hatada¹, Masao Nakamura^2,3, Yoshio Kaneko², Naoki Ogawa^2,3, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN-CEMS, 3.JST-PRESTO)

6:15 PM - 6:30 PM

△ [19p-133-17] Transient Negative Capacitance at Ferroelectric/semiconductor Hetero-junction

〇(D)Kenshi Takada¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

6:30 PM - 6:45 PM

[19p-133-18] Preparation of HfO₂-based ferroelectric thick film by sputtering method and their electrical property

〇Reijiro Shimura¹, Takanori Mimura¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo Tech. SMCT)

6:45 PM - 7:00 PM

[19p-133-19] The structual and electrocal properties of HfO₂:Y/Si(100) hetero epitaxial films

〇Daiki Kamada¹, Kenshi Takada¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. univ.)

Poster presentation

[20a-PB8-1~9] 6.1 Ferroelectric thin films

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[20a-PB8-1] First order reversal curve diagrams for high quality BiFeO₃ epitaxial films

Hiroshi Naganuma¹, 〇Tomohiro Ichinose¹, Daisuke Miura¹ (1.Tohoku Univ.)

9:30 AM - 11:30 AM

[20a-PB8-2] Fabrication of HfZrO₂ thin film from mixed precursor using MOCVD ... ... ...

〇(M1)Genta Nakano¹, Takashi Nakajima^1,2, Yoichiro Hashizume¹, Soichiro Okamura¹ (1.Sci. Tokyo Univ. of Sci., 2.JST PRESTO)

9:30 AM - 11:30 AM

[20a-PB8-3] Microscopic observation of Vinylidene Cyanide / Vinyl Acetate Copolymer Film

〇(M1)Kazuki Takahashi¹, Takashi Nakajima^1,2, Yoichiro Hashizume¹, Soichiro Okamura¹ (1.Sci. Tokyo Univ. of Sci., 2.JST PRESTO)

9:30 AM - 11:30 AM

[20a-PB8-4] Temperature dependence of direct electric properties of Pb(Zr,Ti)O₃ piezoelectric thin films

〇Yuya Kanamitsu¹, Goon Tan¹, Toshihito Umegaki¹, Isaku Kanno¹ (1.Kobe Univ.)

9:30 AM - 11:30 AM

[20a-PB8-5] Change of bent band structure on ferroelectric BaTiO₃ by electric polarization reversal

〇Norihiro Oshime¹, Jun Kano¹, Eiji Ikenaga², Shintaro Yasui³, Satoshi Hinokuma⁴, Naoshi Ikeda¹, Yosuke Hamasaki⁵, Sou Yasuhara³, Takayoshi Yokoya⁶, Mitsuru Itoh³, Tatsuo Fujii¹, Akira Yasui⁷, Hitoshi Osawa⁷ (1.Okayama Univ., 2.IMaSS, Nagoya Univ., 3.MSL, Tokyo Tech., 4.Kumamoto Univ., 5.National Defense Academy, 6.RIIS, Okayama Univ., 7.JASRI)

9:30 AM - 11:30 AM

[20a-PB8-6] Structural analyses and first-principles simulation
for new crystal symmetric BiFeO₃ grown on LaAlO₃ substrates

Hiroshi Naganuma^1,2, In-Tae Bae³, Andras Kovacs⁴, Hong Jian Zhao⁵, Jorge Iniguez⁵, 〇Shintaro Yasui⁶, Tomohiro Ichinose¹ (1.Tohoku Univ., 2.CNRS/Thales, 3.State Univ. NY, 4.ER-C Peter Grunberg Inst., 5.LIST, 6.Tokyo Tech.)

9:30 AM - 11:30 AM

[20a-PB8-7] Influence of Oxygen Flow Rate on Optical Properties of High Quallity BiFeO₃ Thin Films

〇Hiromi Shima¹, Tomohiro Ichinose², Hiroshi Naganuma², Toshihisa Kamei¹ (1.National Defense Academy, 2.Tohoku Univ.)

9:30 AM - 11:30 AM

[20a-PB8-8] Effect of polarization in the piezoelectric polymer film integrated FET

〇Takuya Okayama¹, Shusaku Matsumoto¹, Jun Takarada², Akio Furukawa¹ (1.Tokyo Univ. of Science, 2.Kansai Univ.)

9:30 AM - 11:30 AM

[20a-PB8-9] Evaluation of photovoltaic effect of (K,Na)NbO₃ and (Pb,La)TiO₃ thin films.

〇Hiroki Ohsaka¹, Isaku Kanno¹, Yoshiharu Mukouyama² (1.Kobe Univ., 2.Tokyo Denki Univ.)

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[19a-133-1~12] 6.1 Ferroelectric thin films

△ [19a-133-5] Influence of Fe2O3 Seed Layer on Thin Film Growth of BiFeO3 by MOCVD

△ [19a-133-6] Polarization switching behavior of compositionally-grade Bi1-xSmxFeO3 thin films

△ [19a-133-8] Ferroelectric / ferromagnetic domain structure change in B-site substituted BiFeO3 thin films

△ [19a-133-9] A Bulk Photovoltaic Effect and Induced Optical Strains of Mn-doped BiFeO3 Thin Films

△ [19a-133-11] Enhancement of Output Power for Piezoelectric MEMS Vibration Energy Harvester using BiFeO3 Films

[19p-133-1~19] 6.1 Ferroelectric thin films

△ [19p-133-5] Characterization of piezoelectric property for orientation-controlled (K,Na)NbO3 films prepared by hydrothermal method.

△ [19p-133-6] In-situ observation of crystallographic deformation of (K,Na)NbO3 lead-free thin films under voltage application

△ [19p-133-7] Domain Switching by Applied Electric Field in (001) and (111)-epitaxial (K0.5Na0.5)NbO3 Films

▼ [19p-133-8] Ferroelectric and Magnetic Properties of AlxFe2-xO3 thin films

△ [19p-133-13] Influence of strain on electro-optic effect in c-domain (Ba, Sr)TiO3 thin films (2)

△ [19p-133-15] Study on electrical property control of graphene by pyroelectricity of LiNbO3

△ [19p-133-16] Verification of shift current independent on carrier mobility by optimizing electrodes

△ [19p-133-17] Transient Negative Capacitance at Ferroelectric/semiconductor Hetero-junction

[20a-PB8-1~9] 6.1 Ferroelectric thin films

Authentication

△ [19a-133-5] Influence of Fe₂O₃ Seed Layer on Thin Film Growth of BiFeO₃by MOCVD

△ [19a-133-6] Polarization switching behavior of compositionally-grade Bi_1-xSm_xFeO₃ thin films

△ [19a-133-8] Ferroelectric / ferromagnetic domain structure change in B-site substituted BiFeO₃ thin films

△ [19a-133-9] A Bulk Photovoltaic Effect and Induced Optical Strains of Mn-doped BiFeO₃ Thin Films

△ [19a-133-11] Enhancement of Output Power for Piezoelectric MEMS Vibration Energy Harvester using BiFeO₃ Films

△ [19p-133-5] Characterization of piezoelectric property for orientation-controlled (K,Na)NbO₃ films prepared by hydrothermal method.

△ [19p-133-6] In-situ observation of crystallographic deformation of (K,Na)NbO₃ lead-free thin films under voltage application

△ [19p-133-7] Domain Switching by Applied Electric Field in (001) and (111)-epitaxial (K_0.5Na_0.5)NbO₃ Films

▼ [19p-133-8] Ferroelectric and Magnetic Properties of Al_xFe_2-xO₃ thin films

△ [19p-133-13] Influence of strain on electro-optic effect in c-domain (Ba, Sr)TiO₃ thin films (2)

△ [19p-133-15] Study on electrical property control of graphene by pyroelectricity of LiNbO₃