[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

△ [20p-141-12] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

Keywords:Ferroelectric Tunnel Junction, HfO2

Resistive switching memories (ReRAMs) are attracting much attention for future non-volatile memory applications. Among them, a HfO₂-based ferroelectric tunnel junction (FTJ) memory is a promising candidate as we have reported its device characteristics suitable for low-power high-density applications, such as low operation current in nA-range, self-compliance, intrinsic diode properties, as well as good compatibility with CMOS process. To apply the HfO₂ FTJ to such applications, it is necessary to ensure long-term reliability, e.g., long data retention time and sufficient cycling endurance. In this study, we conducted a detailed investigation on failure mechanisms of the HfO₂ FTJ during set/reset cycling by combining methodology of the well-known reliability evaluation (TDDB) and the memory-specific evaluation (cycling endurance).