[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

[20p-141-11] Low Voltage Operation of Ferroelectric-Gate FETs using HfO₂Ferroelectrics

〇Shinji Migita¹, Hiroyuki Ota¹, Hiroyuki Yamada¹, Keisuke Shibuya¹, Akihito Sawa¹, Takashi Matsukawa¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

Keywords:ferroelectric, FET, HfO2

Charge matching is an important parameter for the design of Ferroelectric-gate FETs. In case of the MFIS strucuture, the device operation is limited by the minor hysteresis loop of the ferroelectric capacitor. In contrast the MFMIS strucure contributes to the charge matching between the ferroelectric capacitor and the MIS capacitor, thus enables a saturated hysteresis loop of the ferroelectric capacitor. This work reposrs a low voltage operation of MFMIS FeFETs using HfO2 ferroelectrics.