The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Trends of ferroelectric HfO2 technologies

[20p-141-1~13] Trends of ferroelectric HfO2 technologies

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 141 (141+142)

Tomoaki Yamada(Nagoya Univ.), Shosuke Fujii(Toshiba Memory)

3:00 PM - 3:15 PM

[20p-141-4] HfO2 Formation on Heavily Doped Si(100) Substrate by RF Magnetoron Sputtering

〇(M1)Masakazu Kataoka1, Min Gee Kim1, Shun-ichiro Ohmi1 (1.Tokyo Tech)

Keywords:ferroelectric, hafnium oxide, crystal growth

Ferroelectric HfO2 have attracted great attention for ferroelectric gate transistor, that can operate in high speed and with low power consumption. In this research, the growth of HfO2 on heavily doped Si(100) substrate utilizing reactive sputtering was investigated.