[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

[20p-141-4] HfO₂ Formation on Heavily Doped Si(100) Substrate by RF Magnetoron Sputtering

〇(M1)Masakazu Kataoka¹, Min Gee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:ferroelectric, hafnium oxide, crystal growth

Ferroelectric HfO₂ have attracted great attention for ferroelectric gate transistor, that can operate in high speed and with low power consumption. In this research, the growth of HfO₂ on heavily doped Si(100) substrate utilizing reactive sputtering was investigated.