[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

[20p-141-7] Trace of Phase Transformation in Hf-Zr-O Films Investigated by Low-Temperature and Long-Time Annealing

〇Shinji Migita¹, Hiroyuki Ota¹, Keisuke Shibuya¹, Hiroyuki Yamada¹, Akihito Sawa¹, Takashi Matsukawa¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

Keywords:ferroelectric, HfO2, phase transformation

Phase transformation of Hf-Zr-O thin films are examined by the low-temeprature and long-time anneal, which enables to trace the evolution of crystalline phases in the process of crsytallization. We studied the changes of crystal structures and dielectric properties in 10-nm-thick Hf_0.5Zr_0.5O₂ thin films.