4:15 PM - 4:45 PM
[20p-141-8] Prospect of the HfO2 ferroelectric thin films for the use of ferroelectric gate transistor
Keywords:Ferroelectrics, adaptive learning neuromorphic devices, negative capacitance
Ferroelectric gate FET, in which the conventional gate insulator is replaced with a ferroelectric thin films has several advantages such as ultimate scalability and nondestructive readout characteristics. Moreover, it is attiractive for the super low power consumption devises such as adaptive learning neuromorphic devices and negative capacitance transistors. My talk will cover the advantages and the issues for the used of the material systems based on HfO2 for the ferroelectric gate FETs.