[20p-211A-1~18] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-211A-18] Spin relaxation time of GaSb/AlSb multiple quantum wells (３)

〇Yuichi Nakamura¹, Lianhe Li², Kizuku Yamada¹, Takuya Kamezaki¹, Edmund H. Linfield², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Leed Univ.)

Keywords:spin relaxation, gallium antimonide, pump and probe measurements

In this research, we investigated the spin relaxation in two GaSb/AlSb multiple quantum wells (MQWs) samples by time-resolved spin dependent pump and probe measurements. As a result, the spin relaxation time of wide well sample was 164 ps in 10 K, and negative temperature dependences of the spin relaxation time was observed between 50 and 200 K in both samples. Because this result is different from the result of the InGaAs/InP MQWs which we measured before, I think this research has the important meaning that can contribute to elucidation of the spin relaxation mechanism in Sb-based materials.