[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

▲ [20p-221C-7] High quality and inclusion suppression by switching flow in 3-inch SiC solution growth

〇Can Zhu¹, Tomoki Endo¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

Keywords:switching flow, inclusion, TSD density

In the solution growth of SiC, threading dislocations conversion by the macrosteps were observed, and ultra-high-quality crystal were achieved. On the other hand, the development of macrosteps leads to the formation of macroscopic defects such as solvent inclusion, which degrade the crystal quality. Therefore, it is necessary to control the macrostep. In our pervious study, to stabilize step flow over the entire crystal, the switching flow growth method was proposed. In this study, we investigate the effect of switching flow on the TSD conversion and the inclusion suppression in 3-inch SiC growth.