Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Shin-Ichiro Kuroki(Hiroshima Univ.), Kazuma Eto(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-221C-1] Investigation on Al diffusion and sheet resistance of Al-implanted and laser-irradiated 4H-SiC

〇(M2)Shogo Muto¹, Akihiro Ikeda², Hiroshi Ikenoue¹, Tanemasa Asano¹ (1.Kyushu Univ., 2.Sojo Univ.)

2:00 PM - 2:15 PM

[20p-221C-2] Millisecond Annealing for High Speed Activation of Impurity in 4H-SiC Wafer by Nitrogen-boosted Atmospheric Pressure Thermal Plasma Jet

〇(M1)Seiki Kawasaki¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Universiy. ADSM)

2:15 PM - 2:30 PM

[20p-221C-3] Investigation on Contact Characteristics of n-type 4H-SiC with Silicon-Cap-Annealing

〇(M1)Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

2:30 PM - 2:45 PM

△ [20p-221C-4] Formation of low resistivity contact on p-type of 4H-SiC using laser doping

〇(M2)Kento Okamoto¹, Kikuchi Toshifumi¹, Ikeda Akihiro², Ikenoue Hiroshi¹, Asano Tanemasa¹ (1.Kyushu Univ., 2.Sojo Univ.)

2:45 PM - 3:00 PM

[20p-221C-5] Performance improvement of 3C-SiC photoelectrodes by surface area expansion

〇(M2)Tomohiro Ambe¹, Masashi Kato¹ (1.Nagoya Inst.)

3:15 PM - 3:30 PM

[20p-221C-6] Effect of the shape of SiC solute source on grown crystals in solution growth of SiC using Cr solvent

〇Kouki Suzuki¹, Toshinori Taishi¹ (1.Shinshu Univ. (Eng.))

3:30 PM - 3:45 PM

▲ [20p-221C-7] High quality and inclusion suppression by switching flow in 3-inch SiC solution growth

〇Can Zhu¹, Tomoki Endo¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

3:45 PM - 4:00 PM

[20p-221C-8] Dislocation Characteristics of SiC Single Crystal Substrates Investigated by Means of Bright-Field X-ray Topography under Multiple-Diffraction Conditions

〇Haruka Kamamoto¹, Yu Fujita¹, Hiroyuki Mizuochi¹, Yoshiyuki Tsusaka^1,2, Junji Matsui² (1.Grad. Sch. of Material Sci.Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Center, Univ. of Hyogo)

4:00 PM - 4:15 PM

[20p-221C-9] Visualization of influence of parameters in solution growth of SiC using machine learning of thermo-fluid analysis

〇Kentaro Kutsukake¹, Yosuke Tsunooka^2,3,5, Keiichi Osada^2,3, Keisuke Ando^2,3, Hongyi Lin^2,3, Can Zhu^2,3, Taka Narumi^2,4, Shunta Harada^2,3, Miho Tagawa^2,3, Toru Ujihara^2,3,5 (1.Inst. Innov. Fut. Soc., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Grad. Eng., Nagoya Univ., 4.VBL, Nagoya Univ., 5.AIST GaN-OIL)

4:15 PM - 4:30 PM

△ [20p-221C-10] Exploration of condition for grinding SiC by Beyesian optimization

〇(M1)Keichi Osada^1,2, Yosuke Tsunooka^1,2,3, Kiyoshi Narita⁴, Koizumi Haruhiko^1,2, Kentaro Kutsukake⁵, Harada Shunta^1,2, Miho Tagawa^1,2, Toru Ujihara^1,2,3 (1.Grad. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.AIST GaN-OIL, 4.Nitolex Corp., 5.Inst. Innov. Fut. Soc., Nagoya Univ.)

4:45 PM - 5:00 PM

[20p-221C-11] Improvement of etching rate profile of 4H-SiC wafer by using ClF₃ gas

Syogo Okuyama¹, 〇Ryohei Kawasaki¹, Kurashima Keisuke¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo Co., Ltd, 3.AIST)

5:00 PM - 5:15 PM

[20p-221C-12] Development of SiC Epitaxial Reactor Cleaning Process Using Chlorine Trifluoride Gas -Evaluation of Purified Pyrolytic Carbon as Susceptor Coating Material-

〇Keisuke Kurashima¹, Hitoshi Habuka¹, Hideki Ito², Shinichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

5:15 PM - 5:30 PM

[20p-221C-13] Quartz surface coating by Y₂O₃ film for SiC epitaxial reactor cleaning using ClF₃ gas

Ryohei Kawasaki¹, Yasuhiro Umetsu², Keisuke Kurashima¹, Kohei Shioda¹, Asumi Hirooka¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ., 2.Techno-Quartz, Inc.,)

5:30 PM - 5:45 PM

[20p-221C-14] Corrosion resistance of AlN to chlorine trifluoride gas for SiC etching

〇Miyu Haruguchi¹, Ryohei Kawasaki¹, Hitoshi Habuka¹, Takahashi Yoshinao² (1.Yokohama Nat. Univ, 2.Kanto Denka Kogyo)

5:45 PM - 6:00 PM

[20p-221C-15] Epitaxial growth of 3C-SiC on Si substrate by chemical vapor deposition with vinylsilane single precursor

〇Kentaro Hashimoto¹, Takuma Doi¹, Wakana Takeuchi^1,2, Osamu Nakatuka^1,3, Shigeaki Zaima⁴ (1.Grad., Sch. of Eng. Nagoya Univ., 2.Aichi Inst. of Technol., 3.IMaSS, Nagoya Univ., 4.IIFS Nagoya Univ.)

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