Hitoshi Habuka

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 233 (233)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

10:30 AM - 10:45 AM

[21a-233-7] Si minimal CVD process measurement by exhaust gas using quartz crystal microbalance

Mitsuko Muroi¹, 〇Hitoshi Habuka¹, Takanori Mikahara^2,3, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

5:15 PM - 5:30 PM

[20p-221C-13] Quartz surface coating by Y₂O₃ film for SiC epitaxial reactor cleaning using ClF₃ gas

Ryohei Kawasaki¹, Yasuhiro Umetsu², Keisuke Kurashima¹, Kohei Shioda¹, Asumi Hirooka¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ., 2.Techno-Quartz, Inc.,)

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