Kentaro Hashimoto

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

5:45 PM - 6:00 PM

[20p-221C-15] Epitaxial growth of 3C-SiC on Si substrate by chemical vapor deposition with vinylsilane single precursor

〇Kentaro Hashimoto¹, Takuma Doi¹, Wakana Takeuchi^1,2, Osamu Nakatuka^1,3, Shigeaki Zaima⁴ (1.Grad., Sch. of Eng. Nagoya Univ., 2.Aichi Inst. of Technol., 3.IMaSS, Nagoya Univ., 4.IIFS Nagoya Univ.)

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