[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-15] Epitaxial growth of 3C-SiC on Si substrate by chemical vapor deposition with vinylsilane single precursor

〇Kentaro Hashimoto¹, Takuma Doi¹, Wakana Takeuchi^1,2, Osamu Nakatuka^1,3, Shigeaki Zaima⁴ (1.Grad., Sch. of Eng. Nagoya Univ., 2.Aichi Inst. of Technol., 3.IMaSS, Nagoya Univ., 4.IIFS Nagoya Univ.)

Keywords:Silicon Carbide, Epitaxial growth, Vinylsilane