The 79th JSAP Autumn Meeting, 2018

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Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[20p-222-1~23] 6.2 Carbon-based thin films

Thu. Sep 20, 2018 1:15 PM - 7:30 PM 222 (222)

Masami Aono(National Defence Academy), Toru Harigai(Toyohashi Univ. of Tech.), Tokuyuki Teraji(NIMS), Yukako Kato(AIST)

6:45 PM - 7:00 PM

[20p-222-21] Observation of Electric Conductiviy of Graphitic Carbon Nitride Films

〇(B)Hiroaki Aoyama1, Kazushi Yasuda1, Hitoe Habuchi1, Tamio Iida1, Hirofumi Takikawa2 (1.NIT Gifu Coll., 2.Toyohashi Univ Tech.)

Keywords:thin film, carbon nitride, semiconductor

Graphitic carbon nitride (g-C3N4) shows semiconducting properties with a bandgap of about 2.8 eV. The film can be applied to a semiconductor material. G-C3N4 films were prepared by evaporating guanidine carbonate as a source. To measure I-V characteristic, the g-C3N4 film was deposited onto a heavy doped n-Si wafer. The I-V curve showed rectifying characteristic. The current flowed from the g-C3N4 film to n-Si.