[20p-222-1~23] 6.2 Carbon-based thin films

[20p-222-22] Electrical properties of Graphitic Carbon Nitride Thin Films under a Vacuum

〇(B)Kazushi Yasuda¹, Hiroaki Aoyama¹, Hitoe Habuchi¹, Hirofumi Takikawa² (1.NIT Gifu Coll., 2.Toyohashi Univ Tech.)

Keywords:thin film, carbon nitride, semiconductor

Graphitic carbon nitride (g-C₃N₄) has semiconducting properties with an energy band gap of about 2.7 eV and is a candidate material for application as optical semiconductor devices. In order to qualify the films, g-C₃N₄ thin films were synthesized by vacuum deposition method and the gap aluminum electrode was formed onto the film by vacuum deposition to measure the electric properties of I-V characteristic and spectral sensitivity. It was found that dark conductivity was approximately 2x10-⁸ S/m and was more than two orders of magnitude larger than synthesized g-C₃N₄ thin films synthesized in the atmosphere.