Atomic Layer Etching with Gas Cluster Ion Beams

Noriaki Toyoda

Presentation information

Symposium (Oral)

Symposium » Current status and future prospect of atomic layer processes

[20p-223-1~11] Current status and future prospect of atomic layer processes

Thu. Sep 20, 2018 1:45 PM - 6:45 PM 223 (223)

Makoto Sekine(Nagoya Univ.), Takeshi Momose(Univ. of Tokyo), Daisuke Hojo(AIST), Kazuhiro Karahashi(Osaka univ.)

5:30 PM - 6:00 PM

[20p-223-8] Atomic Layer Etching with Gas Cluster Ion Beams

〇Noriaki Toyoda¹ (1.Univ. of Hyogo)

Keywords:atomic layer etching, gas cluster ion beam, acetic acid

Recently, atomic layer etching (ALE), that repeats gas adsorption / evacuation / surface layer removal, attracts many attentions. We have been studying the application of gas cluster ion beam (GCIB) to the ALE technique. GCIB realizes ultra-low-energy irradiation (several eV/atom). In addition, GCIB can create high density energy which can not be realized with a monomer ions. This may promote surface reaction at low temperature. In the lecture, we will report the application of GCIB for ALE of metal films using acetic acid or acetylacetone.