[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1] [Young Scientist Presentation Award Speech] Epitaxial growth and bandgap engineering of β-(Ga_1-ySc_y)₂O₃ films by PLD

〇Ryo Wakabayashi¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES)

Keywords:Ga2O3, Alloy, Epitaxial growth

今回更なる物性評価に向けてよりSc組成を高めたβ-(Ga_1-ySc_y)₂O₃薄膜の成長を行い，E_gは5.45 eV (y = 0.32) まで増加することを明らかにした．またβ-(Al_xGa_1-x)₂O₃薄膜と比較して，固溶量に対してより大きなE_g増加が見られた．