[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-13] Low-temperature Process for IGZO TFT with Ar+O₂+H₂ sputtered IGZO channel

〇Mamoru Furuta¹, S G Mahadhi Aman¹, Yusaku Magari¹, Kenta Shimpo¹, Daichi Koretomo¹ (1.Kochi Univ. of Tech.)

Keywords:IGZO, Thin-Film Transistors, Flexible Devices

IGZO sputtering in an Ar, O₂, and H₂ atmosphere followed by annealing represents an effective method for defect reduction of the resulting films. The carrier density of Ar+O₂+H₂ sputtered IGZO films increased with increasing H₂ during sputtering; however, we found that the increased carrier density was drastically reduced by annealing even at 150 °C. The Ar+O₂+H₂ sputtered IGZO was used as the active channel in thin-film transistor (TFT), which led to drastically improved electrical properties after annealing at 150 °C, compared with those obtained using conventional Ar+O₂ sputtered films. The proposed method is very promising for low-temperature-processed oxide TFTs.