18:15 〜 18:30
▼ [20p-234A-18] Effects of Wet O2 Annealing on the Transfer Characteristics of Solution Processed Amorphous Indium Zinc Oxide Thin-film Transistors
キーワード：amorphous oxide semiconductor, wet annealing, thin film transistor
Research on transparent amorphous oxide semiconductor (TAOS) materials have seen a dramatic rise in activity ever since its introduction1. Different materials such as IGZO, HIZO, and IZO have been explored by acting as the switching element in active matrix displays2. The devices produced need to be annealed at temperature >300℃ to remove any existing defects during the fabrication process1. There has also been growing interest in lowering the device fabrication process temperature to enable deposition on low thermal budget, flexible, and transparent substrates. In a previous study, we have demonstrated that low temperature annealing (150℃) of IGZO devices in a humid environment (wet O2 annealing - WO2) can significantly enhance the TFT’s electrical characteristics by improving the M-O network and decreasing oxygen vacancies3. In this work, solution processed IZO TFTs were fabricated at a maximum process temperature of 250℃. Furthermore, the electrical characteristics of devices subjected to channel layer activation using a humid annealing environment were investigated and compared to those that were not.
Acknowledgements: We wish to thank our research collaborators from Nissan Chemical Corporation for providing the IZO solution and other materials used in this research.
Acknowledgements: We wish to thank our research collaborators from Nissan Chemical Corporation for providing the IZO solution and other materials used in this research.