The 79th JSAP Autumn Meeting, 2018

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Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Masataka Higashiwaki(NICT), Tetsuya Yamamoto(Kochi Univ. of Tech.), Mutsumi Kimura(Ryukoku Univ.)

2:15 PM - 2:30 PM

△ [20p-234A-4] Heteroepitaxial Growth of ε-Ga2O3 Films on Sapphire and GaN templates by HVPE.

〇Mayuko Sato1, Nao Takekawa1, Keita Konishi1, Hisashi Murakami1, Yoshinao Kumagai1 (1.Tokyo University of Agriculture and Technology)

Keywords:Galium Oxide