The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.2 Graphene

[20p-311-1~18] 17.2 Graphene

Thu. Sep 20, 2018 1:45 PM - 6:30 PM 311 (Cascade)

Ken Uchida(Keio Univ.), Hiroshi Tabata(Osaka Univ.)

5:30 PM - 5:45 PM

[20p-311-15] Improvement of fabrication yield for quantum device made of suspended graphene nanoribbon grown by plasma CVD

Wakana Okita1, Hiroo Suzuki1, Toshiro Kaneko1, Toshiaki Kato1,2 (1.Dept. of Electronic Eng., Tohoku Univ., 2.JST-PRESTO)

Keywords:Graphene nanoribbon, Quantum device

Recently quantum device application of graphene nanoribbon which can be realized by making graphene into 1-dimensional structure is getting more attention in the world. In this research, we attempted to increase the fabrication yield of GNR quantum device by optimizing plasma CVD process and original nanobar structures for GNR growth. As a result, fabrication yield of GNR quantum device has been increased by using relatively short Ni nanobar as a catalyst. In addition, it was also revealed that carbon supply amount can contribute to improving fabrication yield of GNR quantum devices.