[20p-311-1~18] 17.2 Graphene

△ [20p-311-14] High-Performance Epitaxial Graphene Device Using Yttrium Oxide Dielectric Layer

〇(B)Kento Suwa¹, Norifumi Endo¹, Shoji Akiyama², Keiichiro Tajima¹, Maki Suemitsu¹, Shigeru Konishi², Hiroshi Mogi², Makoto Kawai², Yoshihiro Kubota², Koji Horiba³, Hiroshi Kumigashira³, Hirokazu Fukidome¹ (1.RIEC, Tohoku Univ., 2.ShinEtsu Chemical, 3.KEK)

Keywords:graphene, FET, Yttrium

Graphene has excellent electron transport properties, and is a material suitable for next generation wireless communication applications. One of the reason why high frequency characteristic of graphene device were interfered is that the drain conductance is high. In other words, the drain current is not quite saturated. This time, we made graphene FET using Yttrium natural oxide film, and clean saturation of drain current was observed by output characteristic measurement. Therefore, it is suggested that superior high frequency characteristics can be obtained.