[20p-331-1~13] 13.7 Compound and power electron devices and process technology

△ [20p-331-1] Electric characteristics evaluation of pn diode with vertical deep etched mesa structure and avalanche capability

〇Hayata Fukushima¹, Shigeyoshi Usami¹, Yuto Ando¹, Atsushi Tanaka^2,5, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, 3.ARC, 4.VBL, 5.NIMS)

Keywords:pn diode, avalanche