[20p-331-1~13] 13.7 Compound and power electron devices and process technology

[20p-331-7] The mechanism of GaN photoelectrochemical (PEC) etching

〇FUMIMASA HORIKIRI¹, Yoshinobu Narita¹, Takehiro Yoshida¹ (1.SCIOCS)

Keywords:GaN, Etching, Photoelectrochemical

In this study, we focused on the mechanism of the pulsed PEC etching of a homoepitaxially grown GaN film on a free-standing GaN substrate. We evaluated the etching depth, the roughness of the etched surface, and current-voltage characteristics of the PEC etching. The valence of the GaN dissolving reaction, which is required for the precise control of the etching depth, was evaluated. We discuss about the PEC etching mechanism and how to control the PEC etching of GaN in order to apply to the device process.