The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 1:45 PM - 7:15 PM 438 (3F_Lounge)

Kenji Ishikawa(Nagoya Univ.), Mitsuhiro Omura(Toshiba Memory)

4:00 PM - 4:15 PM

[20p-438-10] Physical etching of surfaces made of Lennard-Jones atoms: a Molecular Dynamics study

Nicolas Aini Mauchamp1, Michiro Isobe1, Satoshi Hamaguchi1 (1.Osaka University)

Keywords:MD simulations, Lennard-Jones

Collision cascade dynamics has been widely studied experimentally and theoretically. However, even for particles interacting via simple two-body potential functions such as Lennard-Jones potential functions, the exact dependence of the sputtering yield on the potential functions has not been well understood yet. The goal of this study is to evaluate the sputtering yield of a surface made of particles interacting with Lenard-Jones potential by the injection of energetic particles of fully repulsive interaction.