[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20p-438-9] Electronic properties and dissociation channels of C₂H_xF_y compounds (III)

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

Keywords:SiNx etching, Hydrofluoroethane, computational chemistry

We are studying disssociation channeles of C2HxFy compounds as the alternative ones of CH2F2 for SiNx etching, using computational chemistry. It was clarified that C-F and C-C bonds dissociations took place in the excited and ionized staes of C2H5F, 1,1-C2H4F2, 1,2-C2H4F2, and 1,1,2-C2H3F3 and the ion pair formation was very important to argue the ionization processes.
In this presentation, the dissociation properties of 1,1,2,2-C2H2F4 and C2HF5 molecules will be presented by using computational chemistry. The rsults show similarly the dissociation properties at the C-F and C-C bonds.