4:15 PM - 4:45 PM
[20p-CE-7] Investigation of GaN MOSFET fabricated with ion implantation process
Keywords:Gallium Nitride, GaN, MOSFET
Presentation information
Special Symposium
Special Symposium » Epitaxial Growth and Device Science of GaN
[20p-CE-1~9] Epitaxial Growth and Device Science of GaN
Thu. Sep 20, 2018 1:30 PM - 5:45 PM CE (Century Hall)
Heiji Watanabe(Osaka Univ.), Kenji Shiraishi(Nagoya Univ.)