[21a-133-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[21a-133-8] Characterization of Structural and Electrical Properties for Silicon Quantum Dot Multilayers using Amorphous Silicon Oxide Thin Films

〇(M1)Ryushiro Akaishi¹, Kohei Kitazawa¹, Kazuhiro Gotoh¹, Shinya Kato², Noritaka Usami¹, Yasuyoshi Kurokawa¹ (1.Nagoya Univ., 2.Nagoya Tech.)

Keywords:quantum dot, silicon, solar cell

Further improvement of efficiency of solar cells, all-silicon tandem cells is proposed. For top cell of all silicon tandem cells, silicon quantum dot (Si-QD) is considered. Si-QD is tunable the bandgap due to quantum size effect. In this research, Si-QD multilyers with a-SiOx layer (for passivation) were fabricated and structural and electrical properties were characterized.