[21a-135-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-135-4] Effect of Fowler-Nordheim current on MOS capacitive sensor

〇Takuya Sobue¹, Shunsuke Kuramoto¹, Kazuki Hagiwara¹, Takahisa Tanaka¹, Ken Uchida¹ (1.Faculty of Sci. & Tech., Keio Univ.)

Keywords:hydrogen sensor, MOS capacitor, palladium