[21a-135-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-135-8] Massively Parallel Computing of Monte Carlo Device Simulation on Super Comuputer

〇Daiki Yamashita¹ (1.Osaka Univ.)

Keywords:simulation, parallel

Although Monte Calro device simulation can calculate carrier behavior in a semiconductor device with high accuracy, it has the disadvantage that the calculation time is enormous.Therefore, we attempted to speed up the analysis of electrical characteristics of microscopic transistors by using large scale parallelization using super computers.In this simulation, a method to obtain a high parallel effect of Poisson's equation which needs to be calculated frequently was disscussed.