[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-1] [Young Scientist Presentation Award Speech] Reaction Pathway Analysis for Conversion of Screw Basal Plane Dislocation to Threading Edge Dislocation in 4H-SiC

〇Yohei Tamura¹, Hiroki Sakakima², Asuka Hatano², Satoshi Izumi² (1.Fujifilm Corp., 2.Univ. of Tokyo)

Keywords:dislocaiton, SiC