[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-2] Partial Dislocation Analysis by Photoluminescence Imaging and Spectroscopy in 4H-SiC Epitaxial Layers

〇Johji Nishio¹, Mitsuhiro Kushibe¹, Aoi Okada¹, Chiharu Ota¹ (1.Toshiba Corp.)

Keywords:PL imaging, Spectroscopy, Partial Dislocations

Observation of partial dislocations by non-destructive and completely noncontact photoluminescence imaging has been found easy to identify Si- and C-core partial dislocations with a combination of band-pass filters with different wavelengths, such as 600 and 850 nm. This was confirmed by the different spectral characteristics of both Si- and C-core partial dislocations obtained by photoluminescence spectroscopy. The intensities with the background subtraction enabled to confirm that both Si- and C-core partial dislocations have single peaks at respective wavelength. In addition, two types of C-core partial dislocations have found different peak wavelengths depending on the excitation power of the illumination. For determining the peak position in the near infra-red region, the detector sensitivity correction has been found essential when the commercially available cooled CCD was used as a detector.